FABRICATION OF SELF-ASSEMBLED MONOLAYER PATTERNS BY SELECTIVE ELECTRON-BEAM IRRADIATION AND A CHEMICAL ADSORPTION TECHNIQUE

被引:31
作者
MINO, N
OZAKI, S
OGAWA, K
HATADA, M
机构
[1] MATSUSHITA TECHNORES INC,MORIGUCHI,OSAKA 570,JAPAN
[2] JAPAN ATOM ENERGY RES INST,OSAKA LAB RADIAT CHEM,NEYAGAWA,OSAKA 572,JAPAN
关键词
D O I
10.1016/0040-6090(93)04155-L
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Self-assembled monolayer patterns have been fabricated on silicon dioxide/silicon substrates by a chemical adsorption (CA) technique from 18-nonadecenyltrichlorosilane, 9-(heptadecafluorodecyl-dimethylsilyl)nonyltrichlorosilane etc. and a selective electron beam irradiation in a nitrogen atmosphere through an SUS mask. The fabrication of CA monolayer patterns was well confirmed by an X-ray photoelectron spectroscopy measurement, a contact angle measurement and film thickness measurement. A fine line and space pattern are fabricated in this study.
引用
收藏
页码:374 / 377
页数:4
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