ION-IRRADIATION-ENHANCED DISSOLUTION OF EPITAXIAL FLUORIDE FILMS - A NEW CLASS OF INORGANIC SINGLE-CRYSTAL ION RESIST

被引：4

作者：

ASANO, T

ISHIWARA, H

FURUKAWA, S

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 39卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(89)90887-2

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：739 / 741

页数：3

共 6 条

[1] HETEROEPITAXIAL GROWTH OF GROUP-IIA-FLUORIDE FILMS ON SI SUBSTRATES [J].

ASANO, T ;

ISHIWARA, H ;

KAIFU, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (10) :1474-1481

[2]

ASANO T, 1987, HETEROEPITAXY SI, V2, P337

[3] THIN-FILM CAF2 INORGANIC ELECTRON RESIST AND OPTICAL-READ STORAGE MEDIUM [J].

HARRISON, TR ;

MANKIEWICH, PM ;

DAYEM, AH .

APPLIED PHYSICS LETTERS, 1982, 41 (11) :1102-1104

[4] RADIATION-DAMAGE IN EPITAXIAL CAF2 FILMS ON SI SUBSTRATES BY AR+ ION-IMPLANTATION [J].

ISHIWARA, H ;

ORIHARA, K ;

ASANO, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (07) :L458-L460

[5] FABRICATION OF METAL EPITAXIAL INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS USING MOLECULAR-BEAM EPITAXY OF CAF2 ON SI [J].

SMITH, TP ;

PHILLIPS, JM ;

AUGUSTYNIAK, WM ;

STILES, PJ .

APPLIED PHYSICS LETTERS, 1984, 45 (08) :907-909

[6] ELECTRON-BEAM-INDUCED DECOMPOSITION OF ION BOMBARDED CALCIUM-FLUORIDE SURFACES [J].

STRECKER, CL ;

MODDEMAN, WE ;

GRANT, JT .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) :6921-6927

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