EFFECTS OF EFFECTIVE-MASS HAMILTONIAN FORMS ON VALENCE BAND STRUCTURES OF QUANTUM-WELLS

被引：15

作者：

NOJIMA, S

机构：

[1] NTT Opto-electronics Laboratories, Atsugi, Kanagawa, 243-01

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1992年 / 31卷 / 10A期

关键词：

QUANTUM WELL; VALENCE BAND STRUCTURES; EFFECTIVE-MASS THEORY;

D O I：

10.1143/JJAP.31.L1401

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Calculations have been made of the valence band structures of two typical quantum well films, GaAs/Al0.3Ga0.7As and In0.53Ga0.47As/InP, using two kinds of effective-mass Hamiltonian forms (characterized by beta = 0 and beta = -1). While the two methods produce no significant difference for GaAs/Al0.3Ga0.7As, a great difference is revealed for In0.53Ga0.47As/InP. The method using beta = 0 appears to be a better choice for the latter system.

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收藏

页码：L1401 / L1403

页数：3

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