HIGH IV PRODUCT LT-GAAS MISFET STRUCTURE

被引：10

作者：

LIPKA, K

SPLINGART, B

KOHN, E

机构：

[1] University of Ulm, Abt. Elektronische Bauelemente und Schaltungen, Oberer Eselsberg

来源：

ELECTRONICS LETTERS | 1993年 / 29卷 / 13期

关键词：

FIELD-EFFECT TRANSISTORS; TRANSISTORS; SEMICONDUCTOR DEVICES AND MATERIALS;

D O I：

10.1049/el:19930782

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Low temperature (LT) GaAs MISFETs with 680 mA/mm drain current and 28V drain voltage have been fabricated. This represents the highest I-V product of a GaAs FET to date, indicating an RF-power handling capability of 2.1 W/mm. The weak dependence of the breakdown voltage on the doping-thickness product indicates that further improvements are possible.

引用

页码：1170 / 1172

页数：3

共 5 条

[1] HIGH-POWER-DENSITY GAAS MISFETS WITH A LOW-TEMPERATURE-GROWN EPITAXIAL LAYER AS THE INSULATOR [J].