AN AMORPHOUS SI HIGH-SPEED LINEAR IMAGE SENSOR

[1] CARLSON DE, 1977, J ELECTRON MATER, V6, P115

[2] AMORPHOUS-SILICON THIN-FILM METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (09) : 754 - 755

[3] PHOTOCONDUCTIVE IMAGING USING HYDROGENATED AMORPHOUS SILICON FILM [J]. APPLIED PHYSICS LETTERS, 1979, 35 (04) : 349 - 351

[4] Knights J. C., 1979, JPN J APPL PHYS, V18, P101

[5] KOMIYA K, 1980, IECE IE8072, P72

[6] MOTOSUGI T, 1981, 28TH JSAP SPR M 29AT

[7] SHIMIZU I, 1980, PHOTOGR SCI ENG, V24, P251

[8] SUBSTITUTIONAL DOPING OF AMORPHOUS SILICON [J]. SOLID STATE COMMUNICATIONS, 1975, 17 (09) : 1193 - 1196

[9] YAMAMOTO H, 1978, 9TH P C IM TECH, P115

[10] ELECTROPHOTOGRAPHIC PROPERTIES OF RF GLOW DISCHARGE-PRODUCED AMORPHOUS SI-H FILM [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) : 305 - 310

[1] CARLSON DE, 1977, J ELECTRON MATER, V6, P115

[2] AMORPHOUS-SILICON THIN-FILM METAL-OXIDE-SEMICONDUCTOR TRANSISTORS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (09) : 754 - 755

[3] PHOTOCONDUCTIVE IMAGING USING HYDROGENATED AMORPHOUS SILICON FILM [J]. APPLIED PHYSICS LETTERS, 1979, 35 (04) : 349 - 351

[4] Knights J. C., 1979, JPN J APPL PHYS, V18, P101

[5] KOMIYA K, 1980, IECE IE8072, P72

[6] MOTOSUGI T, 1981, 28TH JSAP SPR M 29AT

[7] SHIMIZU I, 1980, PHOTOGR SCI ENG, V24, P251

[8] SUBSTITUTIONAL DOPING OF AMORPHOUS SILICON [J]. SOLID STATE COMMUNICATIONS, 1975, 17 (09) : 1193 - 1196

[9] YAMAMOTO H, 1978, 9TH P C IM TECH, P115

[10] ELECTROPHOTOGRAPHIC PROPERTIES OF RF GLOW DISCHARGE-PRODUCED AMORPHOUS SI-H FILM [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (01) : 305 - 310