POLARITY DETERMINATION OF CDTE CRYSTALS BY ELECTRON-DIFFRACTION

被引:17
作者
HEWAT, EA
DICIOCCIO, L
MILLION, A
DUPUY, M
GAILLIARD, JP
机构
关键词
D O I
10.1063/1.340435
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:4929 / 4932
页数:4
相关论文
共 19 条
[1]   POLARITY DETERMINATION IN COMPOUND SEMICONDUCTORS BY CHANNELING - APPLICATION TO HETEROEPITAXY [J].
CHAMI, AC ;
LIGEON, E ;
DANIELOU, R ;
FONTENILLE, J .
APPLIED PHYSICS LETTERS, 1988, 52 (18) :1502-1504
[2]  
Cowley J.M., 1975, DIFFRACTION PHYS, V1
[3]  
DICIOCCIO L, 1987, I PHYS C SER, V87, P243
[4]  
DUPUY M, 1984, J MICROSC SPECT ELEC, V9, P163
[5]   CDXHG1-XTE N-TYPE LAYERS GROWN BY MOLECULAR-BEAM EPITAXY [J].
FAURIE, JP ;
MILLION, A .
APPLIED PHYSICS LETTERS, 1982, 41 (03) :264-266
[6]   CRYSTALLOGRAPHIC POLARITY AND ETCHING OF CADMIUM TELLURIDE [J].
FEWSTER, PF ;
WHIFFIN, PAC .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) :4668-4670
[7]   NUMERICAL EVALUATION OF N-BEAM WAVE-FUNCTIONS IN ELECTRON-SCATTERING BY MULTI-SLICE METHOD [J].
GOODMAN, P ;
MOODIE, AF .
ACTA CRYSTALLOGRAPHICA SECTION A, 1974, A 30 (MAR) :280-290
[8]  
HEWAT AW, 1970, THESIS U MELBOURNE
[9]   ETCH PITS AND POLARITY IN CDTE CRYSTALS [J].
INOUE, M ;
TAKAYANAGI, S ;
TERAMOTO, I .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (08) :2578-&
[10]   CD AND TE DISLOCATIONS IN CDTE [J].
INOUE, M ;
TAKAYANAGI, S ;
TERAMOTO, I .
JOURNAL OF APPLIED PHYSICS, 1963, 34 (02) :404-&