SELECTIVE DETECTOR FOR GAS-CHROMATOGRAPHY BASED ON ADDUCT-MODULATED SEMICONDUCTOR PHOTOLUMINESCENCE

被引：23

作者：

LISENSKY, GC ^{[1
]}

MEYER, GJ ^{[1
]}

ELLIS, AB ^{[1
]}

机构：

[1] UNIV WISCONSIN,DEPT CHEM,MADISON,WI 53706

来源：

ANALYTICAL CHEMISTRY | 1988年 / 60卷 / 22期

关键词：

Acids - Amines - Helium - Photoluminescence - Semiconducting Cadmium Compounds;

D O I：

10.1021/ac00173a020

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

The photoluminescence (PL) of semiconducting n-CdS, Te-doped CdS, and CdSe can be used as the basis for a non-destructive, selective detector for gas chromatography. When placed in series with the thermal conductivity detector (TCD) of a gas chromatograph, the semiconductor responds in parallel with the TCD to species that can engage in adduct formation: PL intensity is enhanced by Lewis bases like amines and quenched by Lewis acids such as carboxylic acids, relative to the intensity observed in the He carrier gas. Gases that interact more weakly with the semiconductor surface like hydrocarbons are not detected by the PL-based detector.

引用

页码：2531 / 2534

页数：4

共 7 条

[1]

ELLIS AB, 1986, CHEM STRUCTURE INTER, pCH6

[2] PHOTO-LUMINESCENCE DEAD LAYER IN P-TYPE INP [J].