PHOTO-LUMINESCENCE DEAD LAYER IN P-TYPE INP

被引：89

作者：

HOLLINGSWORTH, RE

SITES, JR

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 07期

关键词：

D O I：

10.1063/1.329891

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：5357 / 5358

页数：2

相关论文

共 10 条

[1] BIAS-DEPENDENT PHOTO-LUMINESCENCE INTENSITIES IN N-INP SCHOTTKY DIODES
ANDO, K
YAMAMOTO, A
YAMAGUCHI, M
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (12) : 6432 - 6434
[2] SURFACE BAND BENDING EFFECTS ON PHOTO-LUMINESCENCE INTENSITY IN N-INP SCHOTTKY AND MIS DIODES
ANDO, K
YAMAMOTO, A
YAMAGUCHI, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (06) : 1107 - 1112
[3] RADIATIVE TRANSITIONS INDUCED IN GALLIUM-ARSENIDE BY MODEST HEAT-TREATMENT
BIREY, H
SITES, J
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 619 - 634
[4] EFFECT OF SURFACE ELECTRIC FIELDS ON RADIATIVE RECOMBINATION IN CDS
HETRICK, RE
YEUNG, KF
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (07) : 2882 - &
[5] LANGMANN V, 1973, APPL PHYS, V1, P219
[6] SERAPHIN BO, 1967, SEMICONDUCT SEMIMET, V3, P499
[7] INFLUENCE OF THE SURFACE ON PHOTO-LUMINESCENCE FROM INDIUM-PHOSPHIDE CRYSTALS
STREET, RA
WILLIAMS, RH
BAUER, RS
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05): : 1001 - 1004
[8] EXCESS CAPACITANCE AND NON-IDEAL SCHOTTKY BARRIERS ON GAAS
VASUDEV, PK
MATTES, BL
PIETRAS, E
BUBE, RH
[J]. SOLID-STATE ELECTRONICS, 1976, 19 (07) : 557 - 559
[9] Volodina G. K., 1978, Journal of Applied Spectroscopy, V29, P1077, DOI 10.1007/BF01124862
[10] MEASUREMENT OF DIFFUSION LENGTHS IN DIRECT-GAP SEMICONDUCTORS BY ELECTRON-BEAM EXCITATION
WITTRY, DB
KYSER, DF
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (01) : 375 - &