USE OF FIELD-EFFECT TO DETERMINE ENERGY-DEPENDENCE OF LOCALIZED STATE DENSITY IN AMORPHOUS SEMICONDUCTORS

被引：4

作者：

EGERTON, RF

机构：

来源：

关键词：

D O I：

10.1016/0038-1098(72)90901-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：1081 / &

共 8 条

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BARBE, DF .

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[2]

CROCKER AG, TO BE PUBLISHED

[3] MEASUREMENTS OF FIELD EFFECT IN AMORPHOUS SWITCHING MATERIALS [J].

EGERTON, RF .

[4]

Fritzsche H., 1970, Journal of Non-Crystalline Solids, V2, P393, DOI 10.1016/0022-3093(70)90156-0

[5]

Many A., 1965, SEMICONDUCTOR SURFAC

NICOLLIA.EH ;

GOETZBER.A .

BELL SYSTEM TECHNICAL JOURNAL, 1967, 46 (06) :1055-+

[7]

ROSE A, 1956, HELV PHYS ACTA, V29, P199

[8]

SPEAR WE, TO BE PUBLISHED