OPTICAL-PROPERTIES OF INGAAS FILMS EMBEDDED IN PLASMA ETCHED INP WELLS

被引：4

作者：

GEORGAKILAS, A

CHRISTOU, A

LEFEBVRE, P

ALLEGRE, J

ZEKENTES, K

HALKIAS, G

机构：

[1] UNIV MONTPELLIER 2,CNRS,URA 0357,F-34095 MONTPELLIER,FRANCE

[2] FDN RES & TECHNOL HELLAS,IESL,GR-71110 IRAKLION,GREECE

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 07期

关键词：

D O I：

10.1063/1.107805

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optical properties of InGaAs films grown in plasma etched InP wells by molecular beam epitaxy have been investigated and compared to the properties of similar films grown on nonpatterned InP substrates. The excitonic features of the photoluminescence spectra were maintained for the selectively grown well films.

引用

收藏

页码：798 / 800

页数：3

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