ANNEALING BEHAVIOR OF ELECTROPLATED PERMALLOY THIN-FILMS .2.

被引：5

作者：

GANGULEE, A ^{[1
]}

ANDERSON, RL ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1974年 / 3卷 / 01期

关键词：

D O I：

10.1007/BF02654551

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：171 / 192

页数：22

共 20 条

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BARTON, CJ ;

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ANSELL, GS .

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[2]

Anderson R. L., 1973, Journal of Electronic Materials, V2, P161, DOI 10.1007/BF02666150

[3]

CLAREBROUGH LM, 1963, RECOVERY RECRYSTALLI

[4]

FUJII T, 1968, IEEE T, VMAG4, P515

[5]

Fuks M. Ya., 1970, Fizika Metallov i Metallovedenie, V29, P271

[6] STRUCTURE OF ELECTROPLATED AND VAPOR-DEPOSITED COPPER FILMS .2. EFFECTS OF ANNEALING [J].

GANGULEE, A .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (10) :3943-&

[7]

GANGULEE A, UNPUBLISHED

[8] MAGNETIC ANNEALING OF NI-FE FILMS THAT POSSESS A STABLE STRUCTURE [J].

HOROWITZ, SJ ;

RUDEE, ML .

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1971, 5 (02) :427-+

[9] ANNEALING BEHAVIOR OF INDUCED ANISTROPY AND RELATED MAGNETIC PROPERTIES IN PERMALLOY FILMS [J].

IWATA, T ;

HAGEDORN, FB .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (05) :2258-+

[10]

JOHNSON GO, 1973, IEEE T, VMAG9, P13

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