AN OBSERVATION OF 650-DEGREES-C DEFORMATION OF SI SURFACE UNDER ULTRA HIGH-VACUUM

被引：7

作者：

NAKAMURA, N

OHSHIMA, T

NAKAGAWA, K

MIYAO, M

机构：

[1] Central Research Laboratory, Hitachi, Ltd., Kokubunji

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 06期

关键词：

D O I：

10.1063/1.346395

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Significant deformation of a grooved Si surface is discovered during low temperature processing (650-900 °C) in a ultra high vacuum. The lowest temperature at which deformation results is determined to be 650 °C for a (111)Si substrate. In addition, clear facets are formed after high temperature processing (850-900 °C). These new findings are tentatively considered to originate from the surface migration of Si atoms on atomically clean surfaces.

引用

页码：3038 / 3040

页数：3

共 12 条

[1]

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