EFFECTS OF AMMONIA ON THE GROWTH OF ZNSE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

The electrical and luminescence properties of ZnSe films grown on GaAs(100) substrates by metalorganic chemical vapor deposition in an atmosphere of dilute ammonia have been investigated. The observed properties correlate well with each other. The growth rate RG and the electron mobility at low temperatures increased markedly. Films with a maximum mobility of more than 10000 cm2/(V ·s) at 40 K have been obtained at RG>20 µm/h. It is suggested that active hydrogen produced by the decomposition of ammonia expedites the decomposition of dimethylzinc on the film surface and reduces carbon contamination. © 1990 The Japan Society of Applied Physics.