NEAR BAND EDGE PHOTOACOUSTIC SPECTRA OF P-SI SINGLE-CRYSTALS

被引：42

作者：

IKARI, T ^{[1
]}

YOKOYAMA, H ^{[1
]}

SHIGETOMI, S ^{[1
]}

FUTAGAMI, K ^{[1
]}

机构：

[1] KURUME UNIV,DEPT PHYS,KURUME,FUKUOKA 830,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 05期

关键词：

Band edge; Impurity level; P-Si; Photoacoustic spectra;

D O I：

10.1143/JJAP.29.887

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Room-temperature photoacoustic (PA) spectra of p-type silicon single crystals were measured by using a piezoelectric transducer as a detector. Two peaks at 1.08 and 1.20 eV were observed. Since the peak at 1.08 eV appears only in boron-doped p-type samples, we consider this peak to be due to the boron impurity level. The 1.20 eV peak beyond the band gap observed for both p- and n-type samples is considered to be an apparent one due to the bending of the sample in the highly absorbing region. The effect of the modulation frequency and the detector geometries are explained well by taking into account the sample bending and the pyroelectric effect. © 1990 The Japan Society of Applied Physics.

引用

页码：887 / 890

页数：4

共 14 条

[1] NONRADIATIVE CAPTURE AND RECOMBINATION BY MULTIPHONON EMISSION IN GAAS AND GAP [J].