MEASUREMENT OF SI(111) SURFACE STRESS BY A MICROSCOPIC TECHNIQUE

被引：35

作者：

TWESTEN, RD ^{[1
]}

GIBSON, JM ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT MAT SCI,URBANA,IL 61801

来源：

PHYSICAL REVIEW B | 1994年 / 50卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.50.17628

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have developed a method for the local measurement of surface stress using transmission electron microscopy. Applying this technique to the clean Si(111) surface during 7×7-1×1 phase coexistence, we determine the stress difference between the phases to be 30±5 meV/A2. This relatively small difference is consistent with the presence of adatoms in the 1×1 surface. The method can be easily extended to other surfaces and interfaces that have well-defined domain boundaries. © 1994 The American Physical Society.

引用

收藏

页码：17628 / 17631

页数：4

相关论文

共 24 条

[1] INVERSION OF CONVERGENT-BEAM ELECTRON-DIFFRACTION PATTERNS [J].

BIRD, DM ;

SAUNDERS, M .

ACTA CRYSTALLOGRAPHICA SECTION A, 1992, 48 :555-562

[2] ENHANCED X-RAY DIFFRACTION FROM SUBSTRATE CRYSTALS CONTAINING DISCONTINUOUS SURFACE FILMS [J].

BLECH, IA ;

MEIERAN, ES .

JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) :2913-&

[3] ABINITIO THEORY OF THE SI(111)-(7X7) SURFACE RECONSTRUCTION - A CHALLENGE FOR MASSIVELY PARALLEL COMPUTATION [J].

BROMMER, KD ;

NEEDELS, M ;

LARSON, BE ;

JOANNOPOULOS, JD .

PHYSICAL REVIEW LETTERS, 1992, 68 (09) :1355-1358

[4] PHASE-TRANSITION ON THE SI(111) SURFACE - A 1ST-ORDER PHASE-TRANSITION UNDER STRAIN [J].

CHEVRIER, J ;

VINH, LT ;

CRUZ, A .

SURFACE SCIENCE, 1992, 268 (1-3) :L261-L266

[5]

HIRSCH MA, 1967, ELECTRON MICROSCOPY

[6] DIRECT MEASUREMENT OF CRYSTAL-SURFACE STRESS [J].

MARTINEZ, RE ;

AUGUSTYNIAK, WM ;

GOLOVCHENKO, JA .

PHYSICAL REVIEW LETTERS, 1990, 64 (09) :1035-1038

[7] DESIGN OF AN ULTRAHIGH-VACUUM SPECIMEN ENVIRONMENT FOR HIGH-RESOLUTION TRANSMISSION ELECTRON-MICROSCOPY [J].

MCDONALD, ML ;

GIBSON, JM ;

UNTERWALD, FC .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1989, 60 (04) :700-707

[8] ORIGINS OF STRESS ON ELEMENTAL AND CHEMISORBED SEMICONDUCTOR SURFACES [J].

MEADE, RD ;

VANDERBILT, D .

PHYSICAL REVIEW LETTERS, 1989, 63 (13) :1404-1407

[9] SURFACE DISLOCATION PROCESS FOR SURFACE RECONSTRUCTION AND ITS APPLICATION TO THE SILICON (111) 7X7 RECONSTRUCTION [J].

PETROFF, PM ;

WILSON, RJ .

PHYSICAL REVIEW LETTERS, 1983, 51 (03) :199-202

[10] IMAGING SUBSURFACE STRAIN AT ATOMIC STEPS ON SI(111) [J].

POHLAND, O ;

TONG, X ;

GIBSON, JM .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1993, 11 (04) :1837-1842