IMAGING SUBSURFACE STRAIN AT ATOMIC STEPS ON SI(111)

被引:14
作者
POHLAND, O
TONG, X
GIBSON, JM
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1993年 / 11卷 / 04期
关键词
D O I
10.1116/1.578435
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Using diffraction contrast in a transmission electron microscope, we show that the subsurface strain around a monatomic step can be revealed on Si(111). The strain appears because small associated lattice plane rotations change the Bragg conditions locally. By image matching with models of the strain field, we are able to identify the magnitude of the strain at the step. While monolayer steps at surfaces have been previously observed, weak beam images reveal contrast which allows for the direct analysis of the associated strain.
引用
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页码:1837 / 1842
页数:6
相关论文
共 13 条
[1]  
BANZHOF H, 1992, 5TH P APEM BEIJ, P74
[2]   APPROXIMATIONS OF DYNAMICAL THEORY OF DIFFRACTION CONTRAST [J].
HOWIE, A ;
BASINSKI, ZS .
PHILOSOPHICAL MAGAZINE, 1968, 17 (149) :1039-&
[4]   DIRECT ELECTRON-MICROSCOPIC IMAGING OF SURFACE-TOPOGRAPHY BY DIFFRACTION AND PHASE-CONTRAST [J].
LEHMPFUHL, G ;
WARBLE, CE .
ULTRAMICROSCOPY, 1986, 19 (02) :135-146
[5]   DARKFIELD AND BRIGHTFIELD TECHNIQUES FOR ELECTRON-MICROSCOPIC OBSERVATION OF ATOMIC STEPS ON MGO SINGLE-CRYSTAL SURFACES [J].
LEHMPFUHL, G ;
UCHIDA, Y .
ULTRAMICROSCOPY, 1979, 4 (03) :275-282
[6]  
MARCHENKO VI, 1980, ZH EKSP TEOR FIZ, V52, P129
[7]  
OSAKABE N, 1992, 5TH P AS PAC EL MICR, P78
[8]   LOW-ENERGY ELECTRON-MICROSCOPY INVESTIGATIONS OF ORIENTATIONAL PHASE-SEPARATION ON VICINAL SI(111) SURFACES [J].
PHANEUF, RJ ;
BARTELT, NC ;
WILLIAMS, ED ;
SWIECH, W ;
BAUER, E .
PHYSICAL REVIEW LETTERS, 1991, 67 (21) :2986-2989
[9]   DYNAMIC OBSERVATIONS OF INTERFACE PROPAGATION DURING SILICON OXIDATION [J].
ROSS, FM ;
GIBSON, JM .
PHYSICAL REVIEW LETTERS, 1992, 68 (11) :1782-1785
[10]   ELASTIC ANALYSIS OF THE ENERGY AND RELAXATION OF STEPPED SURFACES [J].
SROLOVITZ, DJ ;
HIRTH, JP .
SURFACE SCIENCE, 1991, 255 (1-2) :111-119