1.31 MU-M BEAM-EXPANDER INTEGRATED LASER GROWN BY SINGLE-STEP MOVPE

被引：41

作者：

SATO, H

AOKI, M

TAKAHASHI, M

KOMORI, M

UOMI, K

TSUJI, S

机构：

[1] Central Research Laboratory, Hitachi Ltd., Kokuhunji, Tokyo 185

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 15期

关键词：

INTEGRATED OPTICS; VAPOR PHASE EPITAXIAL GROWTH; SEMICONDUCTOR LASERS; OPTICAL COUPLERS;

D O I：

10.1049/el:19950849

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new structure for a 1.3 mu m-wavelength beam-expander integrated ridge-waveguide laser is demonstrated that does not require a regrowth step. A narrow beam divergence of 5.4 degrees (lateral) and 18.9 degrees (vertical) enables a laser diode to be coupled to a cleaved singlemode fibre with an efficiency as high as 33% with a 1 dB alignment tolerance of +/- 2.4 mu m laterally and +/- 1.5 mu m vertically.

引用

页码：1241 / 1242

页数：2

共 6 条

[1] HIGH-POWER AND WIDE-TEMPERATURE-RANGE OPERATIONS OF INGAASP-INP STRAINED MQW LASERS WITH REVERSE-MESA RIDGE-WAVE-GUIDE STRUCTURE [J].