PROPERTIES OF SILICON DIOXIDE FILMS ON SILICON AS DIFFUSION MASKS FOR BORON

被引：7

作者：

ANAND, KV

MCKELL, HD

NORTHROP, DC

机构：

来源：

关键词：

D O I：

10.1088/0022-3727/4/11/316

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1722 / &

共 7 条

[1]

CARSLAW HS, 1962, CONDUCTION HEAT SOLI, P261

[2]

CRANK J, 1967, MATHEMATICS DIFFUSIO, P39

[3] DIFFUSION OF GALLIUM THROUGH SILICON DIOXIDE LAYER [J].

GROVE, AS ;

LEISTIKO, O ;

SAH, CT .

[4] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON [J].

IRVIN, JC .

BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02) :387-+

[5] STRUCTURAL EVALUATION OF SILICON OXIDE FILMS [J].

PLISKIN, WA ;

LEHMAN, HS .

PLISKIN, WA ;

GNALL, RP .

[7]

Yamaguchi J., 1962, JAPANESE J APPL PHYS, V1, P314