ORIENTED DIAMOND ON GRAPHITE FLAKES

被引:28
作者
SUZUKI, T [1 ]
YAGI, M [1 ]
SHIBUKI, K [1 ]
HASEMI, M [1 ]
机构
[1] NISSEI SANGYO CO LTD,ATSUGI,KANAGAWA 24301,JAPAN
关键词
D O I
10.1063/1.112291
中图分类号
O59 [应用物理学];
学科分类号
摘要
Diamond was deposited by the microwave plasma chemical vapor deposition method on a Si(100) substrate on which graphite flakes had been spread with their basal planes parallel to the substrate before deposition. Before diamond deposition, the substrate was preheated at 1200-degrees-C under hydrogen at 60 Torr to clean the surface of graphite flakes. Scanning electron micrographs showed that most of diamond particles were cubo-octahedral in morphology. The {111} planes of some diamond particles, which were judged by their triangular shape, were often parallel to the (0001) plane of graphite. Furthermore, some [111]-oriented diamond particles were clearly nucleated at the edge of graphite. The possibility of heteroepitaxy of diamond on graphite was discussed based on crystallographic considerations.
引用
收藏
页码:540 / 542
页数:3
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