RESONANCE RAMAN-SCATTERING IN SEMICONDUCTORS UNDER UNIAXIAL STRESS - E1(E1+DELTA-1) GAPS

被引：37

作者：

RICHTER, W ^{[1
]}

ZEYHER, R ^{[1
]}

CARDONA, M ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART,FED REP GER

来源：

PHYSICAL REVIEW B | 1978年 / 18卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.18.4312

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4312 / 4324

页数：13

共 34 条

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[9] EFFECTS OF UNIAXIAL STRESS ON ELECTROREFLECTANCE SPECTRUM OF GE AND GAAS [J].

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[10] ORIENTATION-DEPENDENT RESONANT RAMAN-SCATTERING IN INSB AND GASB AT E1-E1+DELTA1 REGION [J].

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