PERFORMANCE OF N+-P SILICON SOLAR-CELLS IN CONCENTRATED SUNLIGHT

被引：19

作者：

BURGESS, EL ^{[1
]}

FOSSUM, JG ^{[1
]}

机构：

[1] SANDIA LABS, ALBUQUERQUE, NM 87115 USA

来源：

关键词：

D O I：

10.1109/T-ED.1977.18752

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：433 / 438

页数：6

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FOSSUM JG, 1976, SOLID STATE ELECTRON, V19, P269, DOI 10.1016/0038-1101(76)90022-8

[6]

FOSSUM JG, 1976, 12TH IEEE PHOT SPEC

[7]

FOSSUM JG, 1974, SLA740273 SAND LAB E

[8]

FOSSUM JG, 1975, MAY EL SOC M

[9]

Godlewski M. P., 1975, 11th IEEE Photovoltaic Specialists Conference, P32

[10] ANALYSIS OF RADIATION EFFECTS IN SEMICONDUCTOR JUNCTION DEVICES [J].

GWYN, CW ;

SCHARFETTER, DL ;

WIRTH, JL .