Electron mobility in II-VI semiconductors

被引：175

作者：

Rode, D. L. ^{[1
]}

机构：

[1] Bell Tel Labs, Murray Hill, NJ 07974 USA

来源：

PHYSICAL REVIEW B-SOLID STATE | 1970年 / 2卷 / 10期

关键词：

D O I：

10.1103/PhysRevB.2.4036

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The electron drift mobility in CdS, CdSe, CdTe, ZnS, ZnSe, and ZnTe is calculated by an iterative solution of the Boltzmann equation for lattice scattering. Piezoelectric, deformation-potential acoustic-mode, and polar-mode scattering are included. The acoustic deformation potential appropriate to acoustic-mode scattering appears to be much higher than previously expected.

引用

页码：4036 / 4044

页数：9

共 38 条

[21] Kobayashi K., 1967, IIVI semiconducting compounds 1967 international conference, P755
[22] *ALLGEMEINE THEORIE DER ABWEICHUNGEN VON DER MATHIESSENSCHEN REGEL
KOHLER, M
HORB
NECKAR
[J]. ZEITSCHRIFT FUR PHYSIK, 1949, 126 (06): : 495 - 506
[23] SOME OPTICAL AND ELECTRICAL MEASUREMENTS ON BLUE FLUORESCENT ZNS-CL SINGLE CRYSTALS
KROGER, FA
[J]. PHYSICA, 1956, 22 (08): : 637 - 643
[24] KURIK M, 1967, PHYS LETT, V24, pA742
[25] GUNN EFFECT IN CDTE
LUDWIG, GW
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (09) : 547 - +
[26] MATOSSI F, 1966, Z NATURFORSCH, V21, pA461
[27] PINES D, 1963, POLARONS EXCITONS
[28] RAY B, 1969, 2 6 COMPOUNDS
[29] ELECTRON MOBILITY IN DIRECT-GAP POLAR SEMICONDUCTORS
RODE, DL
[J]. PHYSICAL REVIEW B-SOLID STATE, 1970, 2 (04): : 1012 - +
[30] NONLINEAR GALVANOMAGNETIC PHENOMENA IN CADMIUM SULFIDE
SAITOH, M
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, 21 (12) : 2540 - &

← 1 2 3 4 →