CURRENT-MODE SUBTHRESHOLD MOS CIRCUITS FOR ANALOG VLSI NEURAL SYSTEMS

被引:200
作者
ANDREOU, AG [1 ]
BOAHEN, KA [1 ]
POULIQUEN, PO [1 ]
PAVASOVIC, A [1 ]
JENKINS, RE [1 ]
STROHBEHN, K [1 ]
机构
[1] JOHNS HOPKINS UNIV,APPL PHYS LAB,LAUREL,MD 20707
来源
IEEE TRANSACTIONS ON NEURAL NETWORKS | 1991年 / 2卷 / 02期
关键词
D O I
10.1109/72.80331
中图分类号
TP18 [人工智能理论];
学科分类号
081104 ; 0812 ; 0835 ; 1405 ;
摘要
This paper presents an overview of the current-mode approach for designing analog VLSI neural systems in subthreshold CMOS technology. Emphasis is given to design techniques at the device level using the current-controlled current conveyor and the translinear principle. Circuits for associative memory and silicon retina systems are used as examples. Where appropriate, we draw analogies to the physics and organization of information processing in the nervous system.
引用
收藏
页码:205 / 213
页数:9
相关论文
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