EVIDENCE FOR METAL-ION DIFFUSION DURING MEMORY-SWITCHING IN THIN SELENIUM FILMS

被引：3

作者：

COLLINS, RA

JONES, G

机构：

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1978年 / 11卷 / 02期

关键词：

D O I：

10.1088/0022-3727/11/2/002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L13 / L16

页数：4

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[10] SWITCHING AND POLARITY-DEPENDENT MEMORY EFFECTS IN SE-SNO2 AND SE-IN2O3 THIN-FILM DEVICES [J].

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