ETCHING TECHNIQUE TO REVEAL DISLOCATIONS IN THIN GAAS FILMS GROWN ON SI SUBSTRATES

被引：8

作者：

NISHIKAWA, H

SOGA, T

MIKURIYA, N

JIMBO, T

UMENO, M

机构：

[1] NAGOYA INST TECHNOL,DEPT PHYS,SHOWA KU,NAGOYA,AICHI 466,JAPAN

[2] NAGOYA INST TECHNOL,DEPT ELECT & COMP ENGN,NAGOYA,AICHI 466,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1988年 / 27卷 / 02期

关键词：

CRYSTALS - Dislocations - ETCHING - SEMICONDUCTING FILMS - Chemical Vapor Deposition;

D O I：

10.1143/JJAP.27.L159

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Dislocations in GaAs and GaAs/Si are revealed by the etching technique at room temperature. The etchant is composed of H//2O, K//2Cr//2O//7, HNO//3, HCl and H//2SO//4. The dislocation density of GaAs grown on Si by MOCVD using GaP and strained layer superlattices is about 1 multiplied by 10**6 cm** minus **2.

引用

页码：L159 / L160

页数：2