HIGH-QUALITY LPE GROWTH OF INGAASP-INP DH LASER WAFERS UNDER A PH3 AMBIENT

被引：15

作者：

TAKAHASHI, S

NAGAI, H

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1981年 / 51卷 / 03期

关键词：

D O I：

10.1016/0022-0248(81)90430-9

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：502 / 508

页数：7

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