ELECTRONIC-STRUCTURE OF THE BOUND EXCITON AND BOUND MULTIEXCITON COMPLEXES IN AL-DOPED SI

The bound exciton (BE) and bound multiexciton complexes (BMEC) luminescence in Al doped Si under uniaxial stress and in an external magnetic field is investigated to study the effects of a j–j coupling of holes. The energetic scheme of the levels of BE and BMEC is established, g‐factors of bound electrons and holes, and the constants of deformation potential for neutral acceptor (NA), BE and BMEC are determined. It is found that in stressed Al doped Si there is no thermal equilibrium between the BE including the electrons electronic from the lowest valleys and those lifted by stress. A few experimental dependences of the BE emission lines intensities on the applied stress are in contradiction with the accepted BE model. Copyright © 1979 WILEY‐VCH Verlag GmbH & Co. KGaA