FREQUENCY LIMITATIONS OF 3-LEVEL OSCILLATORS

被引：4

作者：

ZIMMERL, OF

机构：

来源：

ELECTRONICS LETTERS | 1970年 / 6卷 / 23期

关键词：

D O I：

10.1049/el:19700505

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：728 / &

共 9 条

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BUTCHER, PN ;

HEARN, CJ .

ELECTRONICS LETTERS, 1968, 4 (21) :459-+

[2] CALCULATION OF VELOCITY-FIELD CHARACTERISTIC FOR GALLIUM ARSENIDE [J].

BUTCHER, PN ;

FAWCETT, W .

PHYSICS LETTERS, 1966, 21 (05) :489-&

[3]

GRASL LM, 1969, ARCH ELEKTR UBERTRAG, V23, P165

[4] COMMENTS ON A LIMITATION ON FREQUENCY OF GUNN EFFECT DUE TO INTERVALLEY SCATTERING TIME [J].

GRASL, LM ;

HILLBRAND, HA ;

ZIMMERL, OF ;

OHMI, T .

PROCEEDINGS OF THE IEEE, 1969, 57 (02) :245-+

[5] 3-LEVEL OSCILLATOR - A NEW FORM OF TRANSFERRED-ELECTRON DEVICE [J].

HILSUM, C ;

REES, HD .

ELECTRONICS LETTERS, 1970, 6 (09) :277-&

[6] INSTABILITIES OF INP 3-LEVEL TRANSFERRED-ELECTRON OSCILLATORS [J].

HILSUM, C ;

MULLIN, JB ;

PREW, BA ;

REES, HD ;

STRAUGHAN, BW .

ELECTRONICS LETTERS, 1970, 6 (10) :307-+

[7] SIMPLE GRAPHICAL METHOD FOR CALCULATING EFFICIENCY OF BULK NEGATIVE-RESISTANCE MICROWAVE OSCILLATORS [J].

HILSUM, C .

ELECTRONICS LETTERS, 1970, 6 (14) :448-+

[8] A LIMITATION ON FREQUENCY OF GUNN EFFECT DUE TO INTERVALLEY SCATTERING TIME [J].

OHMI, T .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (10) :1739-+

[9] TIME RESPONSE OF HIGH-FIELD ELECTRON DISTRIBUTION FUNCTION IN GAAS [J].

REES, HD .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1969, 13 (05) :537-&

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