IN-SITU FTIR ANALYSIS FOR THE THERMAL DECOMPOSITIONS OF TRIMETHYLGALLIUM AND TRIMETHYLGALLIUM AMMONIA ADDUCT

被引:27
作者
KIM, SH
KIM, HS
HWANG, JS
CHOI, JG
CHONG, PJ
机构
[1] KOREA RES INST CHEM TECHNOL,POB 107,TAEJON 305606,SOUTH KOREA
[2] YONSEI UNIV,DEPT CHEM,SEOUL 120749,SOUTH KOREA
关键词
D O I
10.1021/cm00039a005
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The thermal decompositions of trimethylgallium (TMG) and trimethylgallium-ammonia adduct (TMG:NH3) have been studied using Fourier transform infrared spectroscopy. A static cold-wall reactor is designed for use in the temperature range 25-1000-degrees-C, and the gaseous reactants and products are in situ analyzed to obtain the kinetic information. TMG:NH3 as well as TMG is decomposed around 500-degrees-C with liberation of the CH3 group. In the case of TMG:NH3, the CH3 group abstracts hydrogen from NH3, forming CH4. The decomposition of NH3 can be described as second-order kinetics, and that of TMG and TMG:NH3 as first-order kinetics. The decomposition rate constant of TMG:NH3 at 1.6 Torr is estimated to be log k1 = 15-63 (kcal/mol)/2.303RT.
引用
收藏
页码:278 / 281
页数:4
相关论文
共 20 条
[1]  
ALMOND MJ, 1992, J CHEM SOC DA, V5
[2]   CALCULATION OF UNIMOLECULAR RATE CONSTANTS FOR COMMON METALORGANIC VAPOR-PHASE EPITAXY PRECURSORS VIA RRKM THEORY [J].
BUCHAN, NI ;
JASINSKI, JM .
JOURNAL OF CRYSTAL GROWTH, 1990, 106 (2-3) :227-238
[3]   HOMOGENEOUS AND HETEROGENEOUS THERMAL-DECOMPOSITION RATES OF TRIMETHYLGALLIUM AND ARSINE AND THEIR RELEVANCE TO THE GROWTH OF GAAS BY MOCVD [J].
DENBAARS, SP ;
MAA, BY ;
DAPKUS, PD ;
DANNER, AD ;
LEE, HC .
JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :188-193
[4]   SPECTRA AND STRUCTURE OF GALLIUM COMPOUNDS .5. INFRARED AND RAMAN-SPECTRA OF GASEOUS, LIQUID AND SOLID TRIMETHYLGALLIUM [J].
DURIG, JR ;
CHATTERJEE, KK .
JOURNAL OF RAMAN SPECTROSCOPY, 1981, 11 (03) :168-173
[5]   OBSERVATION OF THE METHYL RADICAL DURING THE SURFACE DECOMPOSITION REACTION OF TRIMETHYLGALLIUM [J].
FRANCIS, JT ;
BENSON, SW ;
TSOTSIS, TT .
JOURNAL OF PHYSICAL CHEMISTRY, 1991, 95 (12) :4583-4586
[6]   EFFECTS OF HYDROGEN IN AN AMBIENT ON THE CRYSTAL-GROWTH OF GAN USING GA(CH3)3 AND NH3 [J].
HASHIMOTO, M ;
AMANO, H ;
SAWAKI, N ;
AKASAKI, I .
JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :163-168
[7]  
HERZBERG G, 1945, INFRARED RAMAN SPECT, P221
[8]   THE RELATIONSHIP BETWEEN THE PYROLYSIS OF TRIMETHYLGALLIUM IN THE GAS-PHASE AND THAT ON THE SURFACE [J].
HOSHINO, M .
JOURNAL OF APPLIED PHYSICS, 1990, 68 (05) :2538-2540
[9]   PYROLYSIS OF TRIMETHYL GALLIUM [J].
JACKO, MG ;
PRICE, SJW .
CANADIAN JOURNAL OF CHEMISTRY-REVUE CANADIENNE DE CHIMIE, 1963, 41 (06) :1560-&
[10]  
LAIDLER KJ, 1965, CHEM KINETICS, pCH4