MAGNETIC FREEZE-OUT IN N-TYPE INDIUM ANTIMONIDE AND EVIDENCE FOR A DONOR IMPURITY BAND IN ZERO MAGNETIC FIELD

被引：10

作者：

HANLEY, PE

RHODERICK, EH

机构：

[1] Department of Electrical Engineering and Electronics, University of Manchester, Institute of Science and Technology

来源：

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS | 1969年 / 2卷 / 02期

关键词：

D O I：

10.1088/0022-3719/2/2/320

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Hall effect measurements on n-type indium antimonide have shown a magnetic field dependence of donor ionization energy which can be explained by quasi-free electrons in the conduction band screening the donor-ion potential. Electron freeze-out has been observed in the absence of a magnetic field.

引用

页码：365 / +

页数：1

共 10 条

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[8] IMPURITY PHOTOCONDUCTIVITY IN N-TYPE INSB
PUTLEY, EH
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1961, 22 : 241 - 247
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[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 5 (03) : 157 - 170
[10] HYDROGEN ATOM IN A STRONG MAGNETIC FIELD
YAFET, Y
KEYES, RW
ADAMS, EN
[J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1956, 1 (03) : 137 - 142

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