THERMAL CONDUCTIVITY AND THERMOELECTRIC POWER OF GERMANIUM-SILICON ALLOYS

被引：112

作者：

STEELE, MC

ROSI, FD

机构：

来源：

关键词：

D O I：

10.1063/1.1722984

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1517 / 1520

页数：4

共 9 条

[1] CARRUTHERS, 1957, P ROY SOC LONDON A, V238, P502
[2] THERMOELECTRIC POWER OF GERMANIUM BELOW ROOM TEMPERATURE
FREDERIKSE, HPR
[J]. PHYSICAL REVIEW, 1953, 92 (02): : 248 - 252
[3] SEEBECK EFFECT IN GERMANIUM
GEBALLE, TH
HULL, GW
[J]. PHYSICAL REVIEW, 1954, 94 (05): : 1134 - 1140
[4] SEEBECK EFFECT IN SILICON
GEBALLE, TH
HULL, GW
[J]. PHYSICAL REVIEW, 1955, 98 (04): : 940 - 947
[5] JOFFE AV, 1956, IZV AKAD NAUK SSSR F, V20, P65
[6] MEASUREMENT OF THE THERMOELECTRIC POWER OF GERMANIUM AT TEMPERATURES ABOVE 78-DEGREES-K
MIDDLETON, AE
SCANLON, WW
[J]. PHYSICAL REVIEW, 1953, 92 (02): : 219 - 226
[7] PRINCIPLES OF ZONE-MELTING
PFANN, WG
[J]. JOURNAL OF METALS, 1952, 4 (07): : 747 - 753
[8] SEGREGATION OF 2 SOLUTES, WITH PARTICULAR REFERENCE TO SEMICONDUCTORS
PFANN, WG
[J]. JOURNAL OF METALS, 1952, 4 (08): : 861 - 865
[9] DRIFT MOBILITIES IN SEMICONDUCTORS .2. SILICON
PRINCE, MB
[J]. PHYSICAL REVIEW, 1954, 93 (06): : 1204 - 1206