LOW-TEMPERATURE MBE-GROWN IN0.52GA0.18AL0.30AS/INP OPTICAL WAVE-GUIDES

被引：6

作者：

KUNZEL, H

GROTE, N

ALBRECHT, P

BOTTCHER, J

BORNHOLDT, C

机构：

[1] Heinrich-Hertz-Institut für Nachrichtentechnik Berlin GmbH, W-1000 Berlin 10

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 09期

关键词：

OPTICAL WAVE-GUIDE; INTEGRATED OPTICS;

D O I：

10.1049/el:19920534

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The MBE growth of In0.52Ga0.18Al0.30As (lambda(g) = 1.06-mu-m) layers in the temperature range of 400-450-degrees-C was demonstrated to give high-quality optical waveguides which not only exhibit low propagation losses as low as 0.5 dB/cm at lambda = 1.55-mu-m but concomitantly high resistivity of > 10(4) OMEGA cm. The refractive index of In0.52Ga0.18Al0.03As was estimated to be 3.207 +/- 0.03 at lambda = 1.55-mu-m.

引用

页码：844 / 846

页数：3

共 7 条

[1]

BORNHOLDT C, 1992, IN PRESS APPL PHYS L, V60

[2]

CINGUINO P, 1987, 3RD P EUR C INT OPT, P78

[3]

KRAUSER J, 1987, 4TH P EUR C INT OPT, P75

[4]

KUNZEL H, 1991, 21ST P EUR SOL STAT, P569

[5] SINGLE-MODE OPTICAL-WAVEGUIDES AND PHASE SHIFTERS USING INGAALAS ON INP GROWN BY MOLECULAR-BEAM EPITAXY [J].

PAMULAPATI, J ;

BHATTACHARYA, PK .

APPLIED PHYSICS LETTERS, 1990, 56 (02) :103-104

[6] OPTICAL WAVE-GUIDES IN IN0.52AL0.48AS GROWN ON INP BY MBE [J].

RITCHIE, S ;

SCOTT, EG ;

RODGERS, PM .

ELECTRONICS LETTERS, 1986, 22 (20) :1066-1068

[7]

RODGERS PM, 1987, 3RD P EUR C INT OPT, P8

← 1 →