SINGLE-MODE OPTICAL-WAVEGUIDES AND PHASE SHIFTERS USING INGAALAS ON INP GROWN BY MOLECULAR-BEAM EPITAXY

被引:3
作者
PAMULAPATI, J [1 ]
BHATTACHARYA, PK [1 ]
机构
[1] UNIV MICHIGAN,DEPT ELECT ENGN & COMP SCI,SOLID STATE ELECTR LAB,ANN ARBOR,MI 48109
关键词
D O I
10.1063/1.103045
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have investigated the characteristics of molecular beam epitaxial In0.53 (Gax Al1-x) 0.47 As/InP waveguides and phase modulators in the 1.15-1.3 μm wavelength range. Loss at 1.15 μm has been measured and is ∼5 dB/cm. The measured phase shift due to the electro-optic effect results in an electro-optic coefficient r 63 ∼0.6×10-12 m/V. Preliminary results at 1.3 μm show that the loss is reduced and is ∼3.4 dB/cm.
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页码:103 / 104
页数:2
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