CZOCHRALSKI GROWTH OF SIXGE1-X SINGLE-CRYSTALS

被引：40

作者：

KURTEN, M

SCHILZ, J

机构：

[1] Institute of Materials Research, German Aerospace Research Establishment (DLR)

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 139卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(94)90021-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

SixGe1-x single crystals with a Ge content up to 20 at% were grown by the Czochralski technique and the growth parameters were defined. The crystalline perfection was evaluated by high resolution X-ray diffractometry (HRXRD). The half widths of the rocking curves were found to be 16-21 arc sec, showing a crystal perfection that lies near commercially available silicon single crystals.

引用

页码：1 / 5

页数：5

共 10 条

[1]

DISMUKES JP, 1965, T METALL SOC AIME, V233, P672

[2] TEMPERATURE OSCILLATIONS IN SILICON MELTS [J].