INTERFERENCE EFFECTS OF GAMMA-ELECTRIC AND X-ELECTRIC-BREAK-THROUGHS IN INVERSION LAYERS OF SI

被引：8

作者：

OHKAWA, FJ

机构：

[1] The Institute for Solid State Physics, The University of Tokyo, Roppongi, Minato-ku

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1979年 / 46卷 / 03期

关键词：

D O I：

10.1143/JPSJ.46.855

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Interference effects of Γ and X electric-break-throughs in vicinal planes of Si (100) n-channel inversion layers are investigated by the use of the extended zone effective mass equation due to Ohkawa and Uemura. The surface band structure proposed by Tsui et al. is well explained by the interference effects. It is predicted that mini-gaps except the second lowest lying one have a large dependence on an azimuthal component of tilting angles. © 1979, THE PHYSICAL SOCIETY OF JAPAN. All rights reserved.

引用

页码：855 / 860

页数：6

共 17 条

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