NARROW PULSE MEASUREMENT OF DRAIN CHARACTERISTICS OF GAAS-MESFETS

被引:14
作者
BARTON, TM [1 ]
SNOWDEN, CM [1 ]
RICHARDSON, JR [1 ]
LADBROOKE, PH [1 ]
机构
[1] GEN ELECT CO,HIRST RES CTR,WEMBLEY HA9 7PP,MIDDX,ENGLAND
关键词
D O I
10.1049/el:19870489
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
TRANSISTORS, FIELD EFFECT
引用
收藏
页码:686 / 687
页数:2
相关论文
共 3 条
[1]   THE ROLE OF THE DEVICE SURFACE IN THE HIGH-VOLTAGE BEHAVIOR OF THE GAAS-MESFET [J].
BARTON, TM ;
LADBROOKE, PH .
SOLID-STATE ELECTRONICS, 1986, 29 (08) :807-813
[2]   MODELING FREQUENCY-DEPENDENCE OF OUTPUT IMPEDANCE OF A MICROWAVE MESFET AT LOW-FREQUENCIES [J].
CAMACHOPENALOSA, C ;
AITCHISON, CS .
ELECTRONICS LETTERS, 1985, 21 (12) :528-529
[3]  
WIEDER HH, 1983, SURFACES INTERFACES, P390