THE ROLE OF THE DEVICE SURFACE IN THE HIGH-VOLTAGE BEHAVIOR OF THE GAAS-MESFET

被引：61

作者：

BARTON, TM

LADBROOKE, PH

机构：

来源：

SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 08期

关键词：

D O I：

10.1016/0038-1101(86)90183-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：807 / 813

页数：7

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共 18 条

[1] CROYDEN WF, 1981, ELECTROCOMPONENT SCI, V2
[2] CURTICE WR, 1981, 8TH BIENN CORN EL EN, P209
[3] GATE DRAIN AVALANCHE BREAKDOWN IN GAAS POWER MESFETS
DAVID, JPR
SITCH, JE
STERN, MS
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (10) : 1548 - 1552
[4] GAAS POWER MESFETS - DESIGN, FABRICATION, AND PERFORMANCE
DILORENZO, JV
WISSEMAN, WR
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1979, 27 (05) : 367 - 378
[5] ACCURACY OF FINITE-DIFFERENCE SOLUTIONS OF LAPLACES EQUATION
DUNCAN, JW
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1967, MT15 (10) : 575 - &
[6] POWER-LIMITING BREAKDOWN EFFECTS IN GAAS-MESFET
FRENSLEY, WR
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) : 962 - 970
[7] FU S, 1983, THESIS CORNELL U ITH
[8] FLAT PLATE PROBLEM FOR A SEMICONDUCTOR
LEWIS, JA
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1970, 49 (07): : 1483 - +
[9] FIELD SINGULARITY AT EDGE OF AN ELECTRODE ON A SEMICONDUCTOR SURFACE
LEWIS, JA
WASSERSTROM, E
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1970, 49 (06): : 1183 - +
[10] THEORY OF SEMICONDUCTOR SURFACE-STATES AND METAL-SEMICONDUCTOR INTERFACES
LOUIE, SG
CHELIKOWSKY, JR
COHEN, ML
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (04): : 790 - 797