THE ROLE OF THE DEVICE SURFACE IN THE HIGH-VOLTAGE BEHAVIOR OF THE GAAS-MESFET

[11] LOWE C, 1984, THESIS CORNELL U ITH

[12] GAAS-FETS HAVING HIGH OUTPUT POWER PER UNIT GATE WIDTH [J]. ELECTRON DEVICE LETTERS, 1981, 2 (06): : 147 - 148

[13] STILES PJ, 1977, J VAC SCI TECHNOL, V14, P1094

[14] TENEDORIO J, 1982, THESIS CORNELL U ITH

[15] Wasserstrom E., 1970, Bell System Technical Journal, V49, P853

[16] A TREATMENT FOR BOUNDARY SINGULARITIES IN FINITE DIFFERENCE SOLUTIONS OF LAPLACES EQUATION [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1968, MT16 (10) : 889 - &

[17] THEORETICAL-ANALYSIS OF THE DC AVALANCHE BREAKDOWN IN GAAS-MESFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (02) : 154 - 159

[18] LIGHT-EMISSION AND BURNOUT CHARACTERISTICS OF GAAS POWER MESFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) : 567 - 573

[11] LOWE C, 1984, THESIS CORNELL U ITH

[12] GAAS-FETS HAVING HIGH OUTPUT POWER PER UNIT GATE WIDTH [J]. ELECTRON DEVICE LETTERS, 1981, 2 (06): : 147 - 148

[13] STILES PJ, 1977, J VAC SCI TECHNOL, V14, P1094

[14] TENEDORIO J, 1982, THESIS CORNELL U ITH

[15] Wasserstrom E., 1970, Bell System Technical Journal, V49, P853

[16] A TREATMENT FOR BOUNDARY SINGULARITIES IN FINITE DIFFERENCE SOLUTIONS OF LAPLACES EQUATION [J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1968, MT16 (10) : 889 - &

[17] THEORETICAL-ANALYSIS OF THE DC AVALANCHE BREAKDOWN IN GAAS-MESFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (02) : 154 - 159

[18] LIGHT-EMISSION AND BURNOUT CHARACTERISTICS OF GAAS POWER MESFETS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) : 567 - 573