THEORETICAL-ANALYSIS OF THE DC AVALANCHE BREAKDOWN IN GAAS-MESFETS

被引：27

作者：

WROBLEWSKI, R

SALMER, G

CROSNIER, Y

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 02期

关键词：

D O I：

10.1109/T-ED.1983.21089

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：154 / 159

页数：6

共 18 条

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