GAAS POWER MESFETS WITH A GRADED RECESS STRUCTURE

被引：9

作者：

FURUTSUKA, T

HIGASHISAKA, A

AONO, Y

TAKAYAMA, Y

HASEGAWA, F

机构：

[1] Central Research Laboratories, Nippon Electric Co. Ltd., Kawasaki 213, 4-1-1 Miyazaki, Takatsu-ku

来源：

ELECTRONICS LETTERS | 1979年 / 15卷 / 14期

关键词：

Schottky-gate field-effect transistors;

D O I：

10.1049/el:19790299

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new recess structure device was developed to improve the field distribution and therefore the performance of GaAs power m.e.s.f.e.t.s. The linear gain and the output power were improved by 1–2 dB for this structure. The highest output powers obtained are 15 W with 4 dB associated gain at 6 GHz, and 4·3 W with 3 dB associated gain at 11 GHz. © 1979, The Institution of Electrical Engineers. All rights reserved.

引用

页码：417 / 418

页数：2

共 4 条

[1] POWER GAAS MESFET WITH A HIGH DRAIN-SOURCE BREAKDOWN VOLTAGE
FUKUTA, M
SUYAMA, K
SUZUKI, H
NAKAYAMA, Y
ISHIKAWA, H
[J]. IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1976, 24 (06) : 312 - 317
[2] IMPROVEMENT OF DRAIN BREAKDOWN VOLTAGE OF GAAS POWER MESFETS BY A SIMPLE RECESS STRUCTURE
FURUTSUKA, T
TSUJI, T
HASEGAWA, F
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) : 563 - 567
[3] HONJO K, 1979, APR IEEE MTTS INT MI
[4] 11-GHZ AND 12-GHZ MULTI-WATT INTERNAL MATCHING FOR POWER GAAS-FETS
TAKAYAMA, Y
OGAWA, T
AONO, Y
[J]. ELECTRONICS LETTERS, 1979, 15 (11) : 326 - 328

← 1 →