PHOTOLUMINESCENCE LIFETIME OF ALAS/GAAS DISORDERED SUPERLATTICES

被引：17

作者：

KASU, M

YAMAMOTO, T

NODA, S

SASAKI, A

机构：

[1] Department of Electrical Engineering, Kyoto University

来源：

APPLIED PHYSICS LETTERS | 1991年 / 59卷 / 07期

关键词：

D O I：

10.1063/1.105347

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Time-resolved photoluminescences (PL) of Al(x)Ga(1-x)As (0 less-than-or-equal-to x less-than-or-equal-to 0.5) bulk alloys, AlAs/GaAs ordered superlattices, and AlAs/GaAs disordered superlattices are measured at 77 K and compared. The PL lifetimes of the AlAs/GaAs disordered superlattices were always shorter than those of the Al0.5Ga0.5As bulk alloy and the AlAs/GaAs ordered superlattices with indirect band gaps. These shorter PL lifetimes of the disordered superlattices suggest a relaxation of the momentum conservation during radiative recombination by intentional disordering.

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页码：800 / 802

页数：3

相关论文

共 14 条

[1]

ENEGEMANN D, 1974, AMORPHOUS LIQUID SEM, P947

[2]

ENEGEMANN D, 1977, PHYS STATUS SOLIDI B, V79, P195

[3] LINEWIDTH DEPENDENCE OF RADIATIVE EXCITON LIFETIMES IN QUANTUM-WELLS [J].

FELDMANN, J ;

PETER, G ;

GOBEL, EO ;

DAWSON, P ;

MOORE, K ;

FOXON, C ;

ELLIOTT, RJ .

PHYSICAL REVIEW LETTERS, 1987, 59 (20) :2337-2340

[4] IMPROVED RECOMBINATION LIFETIME OF PHOTOEXCITED CARRIERS IN GAAS SINGLE QUANTUM-WELL HETEROSTRUCTURES CONFINED BY GAAS/ALAS SHORT-PERIOD SUPERLATTICES [J].

FUJIWARA, K ;

NAKAMURA, A ;

TOKUDA, Y ;

NAKAYAMA, T ;

HIRAI, M .

APPLIED PHYSICS LETTERS, 1986, 49 (18) :1193-1195

[5] RECOMBINATION ENHANCEMENT DUE TO CARRIER LOCALIZATION IN QUANTUM WELL STRUCTURES [J].

GOBEL, EO ;

JUNG, H ;

KUHL, J ;

PLOOG, K .

PHYSICAL REVIEW LETTERS, 1983, 51 (17) :1588-1591

[6] ABSORPTION-SPECTRA AND PHOTOLUMINESCENT PROCESSES OF ALAS GAAS DISORDERED SUPERLATTICES [J].

KASU, M ;

YAMAMOTO, T ;

NODA, S ;

SASAKI, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1990, 29 (05) :828-834

[7] ELECTROLUMINESCENCE OF ALAS/GAAS DISORDERED SUPERLATTICES [J].

KASU, M ;

YAMAMOTO, T ;

NODA, S ;

SASAKI, A .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1990, 29 (09) :L1588-L1590

[8] EXPONENTIAL-DISTRIBUTION OF THE RADIATIVE DECAY-RATES INDUCED BY ALLOY SCATTERING IN AN INDIRECT-GAP SEMICONDUCTOR [J].

KLEIN, MV ;

STURGE, MD ;

COHEN, E .

PHYSICAL REVIEW B, 1982, 25 (06) :4331-4333

[9]

MINAMI F, 1988, 19TH P INT C PHYS SE, P411

[10] PROPOSAL AND EXPERIMENTAL RESULTS OF DISORDERED CRYSTALLINE SEMICONDUCTORS [J].

SASAKI, A ;

KASU, M ;

YAMAMOTO, T ;

NODA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (07) :L1249-L1251