CAPACITANCE MODELING FOR DOUBLE-SIDED SI DETECTORS WITH DOUBLE-METAL READOUT

被引：10

作者：

HUSSON, D

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1994年 / 41卷 / 04期

关键词：

D O I：

10.1109/23.322811

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A model is presented for calculation of the large contribution to electronic noise coming from the new double-metal readout on double-sided silicon strip detectors. It applies to the two types of N-side insulating schemes: electrode extension or P-barrier. The 3D capacitor structure is described by a grid model, whose sub-elements are all 2D calculated, using analytic formulae, discrete electrostatics and device simulation (PROUDS, TOSCA). The model is tested on existing detectors (SI, HPK,CSEM). All calculations are static.

引用

页码：811 / 816

页数：6

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