MICROSTRUCTURE AND MAGNETIC-PROPERTIES OF FETAN FILMS

被引：11

作者：

HAFTEK, E

BARNARD, JA

机构：

[1] Department of Metallurgical and Materials Engineering, The University of Alabama, Tuscaloosa

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1994年 / 30卷 / 06期

基金：

美国安德鲁·梅隆基金会;

关键词：

D O I：

10.1109/20.333942

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper investigates single layer dc magnetron sputtered FeTaN films of varying nitrogen content and thickness. Crystallographic aspects of (110) plane disorientation, lattice deformation and their relationship to coercive force and anisotropy field are analyzed.

引用

页码：3915 / 3917

页数：3

共 8 条

[1] DETERMINING THE LATTICE-RELAXATION IN SEMICONDUCTOR LAYER SYSTEMS BY X-RAY-DIFFRACTION [J].