RELAXATION OF STRAINED INGAAS DURING MOLECULAR-BEAM EPITAXY

被引：116

作者：

WHALEY, GJ

COHEN, PI

机构：

[1] Department of Electrical Engineering, University of Minnesota, Minneapolis

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 02期

关键词：

D O I：

10.1063/1.103966

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Relaxation of strained InxGa1-xAs films grown on GaAs substrates has been measured in situ during molecular beam epitaxy growth by reflection high-energy electron diffraction (RHEED). Growth is found to be layer by layer up to a strain-dependent ''critical'' thickness where three-dimensional clusters with {114} facets form. The onset of cluster growth is simultaneous with lattice relaxation as measured by RHEED. The relaxation during growth is compared with the Dodson-Tsao model for strained-layer relaxation [Appl. Phys. Lett. 53, 1325 (1987)]. Two distinct mechanisms for relaxation were found depending on film strain. An activation energy for relaxation was measured to be 4.4 eV for a film strain of 2.3%. The relaxation deviated from the Dodson-Tsao model for nongrowth conditions.

引用

页码：144 / 146

页数：3

共 21 条

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