PHASE-SHIFT CALCULATION OF ELECTRON-MOBILITY IN N-TYPE SILICON AT LOW-TEMPERATURES

被引：59

作者：

MEYER, JR

BARTOLI, FJ

机构：

来源：

PHYSICAL REVIEW B | 1981年 / 24卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.24.2089

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2089 / 2100

页数：12

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