SHORT CHANNEL, CMOS-COMPATIBLE JFET IN LOW-NOISE APPLICATIONS

被引:15
作者
BUTTLER, W
LUTZ, G
CESURA, G
MANFREDI, PF
SPEZIALI, V
TOMASINI, A
机构
[1] MAX PLANCK INST PHYS & ASTROPHYS,W-8000 MUNICH 40,GERMANY
[2] INFN,I-20133 MILAN,ITALY
[3] UNIV PAVIA,DIPARTIMENTO ELETTRON,I-27100 PAVIA,ITALY
关键词
D O I
10.1016/0168-9002(93)90333-D
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
An N-channel JFET with 1.6 mum gate length has been realised in the CMOS-compatible technology. Such a device is intended as the basic front-end element in the development of new low noise circuits of large bandwidth. This paper presents the results of a full device characterisation concerning small signal behaviour, noise spectral densities and noise sensitivities to absorbed radiation. The performances of some monolithic circuits employing the short channel JFET as an input element, among them preamplifiers tailored to different detector capacitances, an entire analog processor for microstrip detectors and a multichannel preamplifier system are discussed.
引用
收藏
页码:63 / 70
页数:8
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