ELECTRICAL-PROPERTIES OF CDS/CDTE HETEROJUNCTIONS

被引:31
作者
CHU, TL [1 ]
CHU, SS [1 ]
ANG, ST [1 ]
机构
[1] SO METHODIST UNIV, DALLAS, TX 75275 USA
关键词
D O I
10.1063/1.341840
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:1233 / 1237
页数:5
相关论文
共 12 条
[1]   GROWTH OF CDTE-FILMS BY CLOSE-SPACED VAPOR TRANSPORT [J].
ANTHONY, TC ;
FAHRENBRUCH, AL ;
BUBE, RH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (03) :1296-1302
[2]  
Bonnet D., 1972, 9TH IEEE PHOT SPEC C, P129
[3]  
CHENG LJ, 1984, 17TH P IEEE PHOT SPE, P851
[4]   CAPACITANCE OF P-N HETEROJUNCTIONS INCLUDING EFFECTS OF INTERFACE STATES [J].
DONNELLY, JP ;
MILNES, AG .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (02) :63-+
[5]   HETEROJUNCTIONS IN PHOTOVOLTAIC DEVICES [J].
FEUCHT, DL .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (01) :57-64
[6]   PHOTO-VOLTAIC MATERIALS AND DEVICES FOR TERRESTRIAL SOLAR-ENERGY APPLICATIONS [J].
HOVEL, HJ .
SOLAR ENERGY MATERIALS, 1980, 2 (03) :277-312
[8]   EVALUATION OF CDS-CDTE HETEROJUNCTION SOLAR-CELL [J].
MITCHELL, KW ;
FAHRENBRUCH, AL ;
BUBE, RH .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (10) :4365-4371
[9]   CURRENT TRANSPORT MECHANISMS OF ELECTROCHEMICALLY DEPOSITED CDS/CSTE HETEROJUNCTION [J].
OU, SS ;
STAFSUDD, OM ;
BASOL, BM .
SOLID-STATE ELECTRONICS, 1984, 27 (01) :21-25
[10]   NGE-PGAAS HETEROJUNCTIONS [J].
RIBEN, AR ;
FEUCHT, DL .
SOLID-STATE ELECTRONICS, 1966, 9 (11-1) :1055-&