THE STRUCTURE OF A-SI-H BY SMALL-ANGLE X-RAY-SCATTERING

被引：32

作者：

MAHAN, AH ^{[1
]}

CHEN, Y ^{[1
]}

WILLIAMSON, DL ^{[1
]}

MOONEY, GD ^{[1
]}

机构：

[1] COLORADO SCH MINES,GOLDEN,CO 80401

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 137卷

关键词：

D O I：

10.1016/S0022-3093(05)80058-4

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We use small angle x-ray scattering (SAXS) and density measurements by flotation to examine the microstructure of a-Si:H deposited by various techniques. The systems studied include rf glow discharge (GD) films deposited at different substrate temperatures and a-Si:H deposited using other techniques such as very high frequency GD (VHF GD), sputtering (SP) and hot wire assisted chemical vapor deposition (HW). We review the methodology used to analyze the SAXS data and present extensive data where the SAXS samples were tilted with respect to the x-ray beam axis to examine more closely the microvoid shapes. The present results suggest that the microvoid shapes may be deposition system dependent.

引用

页码：65 / 70

页数：6

共 21 条

[1] MULTIPLE-QUANTUM NMR-STUDY OF CLUSTERING IN HYDROGENATED AMORPHOUS-SILICON [J].