EFFECT OF HYDROGEN CONTENT ON THE PHOTO-VOLTAIC PROPERTIES OF AMORPHOUS SILICON

被引：34

作者：

CARLSON, DE

MAGEE, CW

TRIANO, AR

机构：

[1] RCA Laboratories, Princeton

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1979年 / 126卷 / 04期

关键词：

amorphous semiconductor; diodes; mass spectroscopy;

D O I：

10.1149/1.2129110

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Hydrogenated amorphous silicon (a-Si:H) films were deposited from an rf electrodeless glow discharge in silane, and the dependence of the hydrogen concentration on substrate temperature, silane pressure, and rf power was studied by means of secondary ion mass spectroscopy (SIMS). The photovoltaic properties of the a-Si:H films were also studied as a function of the same deposition parameters. The observed photovoltaic behavior appears to be mainly due to variations in the optical gap caused by changes in the hydrogen concentration of the Alms. © 1979, The Electrochemical Society, Inc. All rights reserved.

引用

页码：688 / 691

页数：4

共 21 条

[1] COMPARATIVE-STUDY OF STRUCTURE OF EVAPORATED AND GLOW-DISCHARGE SILICON
BARNA, A
BARNA, PB
RADNOCZI, G
TOTH, L
THOMAS, P
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 41 (01): : 81 - 84
[2] QUANTITATIVE-ANALYSIS OF HYDROGEN IN GLOW-DISCHARGE AMORPHOUS SILICON
BRODSKY, MH
FRISCH, MA
ZIEGLER, JF
LANFORD, WA
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (11) : 561 - 563
[3] Carlson D. E., 1977, 1977 International Electron Devices Meeting, P214, DOI 10.1109/IEDM.1977.189210
[4] SOLAR-CELLS USING DISCHARGE-PRODUCED AMORPHOUS SILICON
CARLSON, DE
WRONSKI, CR
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1977, 6 (02) : 95 - 106
[5] AMORPHOUS SILICON SOLAR-CELLS
CARLSON, DE
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (04) : 449 - 453
[6] SIMS ANALYSIS OF DEUTERIUM DIFFUSION IN HYDROGENATED AMORPHOUS SILICON
CARLSON, DE
MAGEE, CW
[J]. APPLIED PHYSICS LETTERS, 1978, 33 (01) : 81 - 83
[7] PREPARATION AND PROPERTIES OF AMORPHOUS SILICON
CHITTICK, RC
ALEXANDE.JH
STERLING, HF
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (01) : 77 - &
[8] USE OF NUCLEAR-REACTIONS AND SIMS FOR QUANTITATIVE DEPTH PROFILING OF HYDROGEN IN AMORPHOUS SILICON
CLARK, GJ
WHITE, CW
ALLRED, DD
APPLETON, BR
MAGEE, CW
CARLSON, DE
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (09) : 582 - 585
[9] USE OF HYDROGENATION IN STRUCTURAL AND ELECTRONIC STUDIES OF GAP STATES IN AMORPHOUS-GERMANIUM
CONNELL, GAN
PAWLIK, JR
[J]. PHYSICAL REVIEW B, 1976, 13 (02): : 787 - 804
[10] NEGATIVE-U STATES IN GAP IN HYDROGENATED AMORPHOUS SILICON
FISCH, R
LICCIARDELLO, DC
[J]. PHYSICAL REVIEW LETTERS, 1978, 41 (13) : 889 - 891

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