REDUCTION OF STRAIN IN GAAS GROWN ON CAF2/SI HETEROEPITAXIAL SUBSTRATES

被引：1

作者：

HASHIMOTO, S

GIBSON, WM

SCHOWALTER, LJ

LEE, EY

CLAXTON, PA

机构：

[1] SUNY ALBANY,INST PARTICLE SOLID INTERACT,ALBANY,NY 12222

[2] RENSSELAER POLYTECH INST,CTR INTEGRATED ELECTR,TROY,NY 12180

[3] RENSSELAER POLYTECH INST,DEPT PHYS,TROY,NY 12180

[4] UNIV SHEFFIELD,DEPT ELECTR & ELECT ENGN,SHEFFIELD S1 3JD,S YORKSHIRE,ENGLAND

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 95卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(89)90429-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：403 / 404

页数：2

共 9 条

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :R1-R29

[2] FORMATION OF GAAS-ON-INSULATOR STRUCTURES ON SI SUBSTRATES BY HETEROEPITAXIAL GROWTH OF CAF2 AND GAAS [J].

ASANO, T ;

ISHIWARA, H ;

LEE, HC ;

TSUTSUI, K ;

FURUKAWA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1986, 25 (02) :L139-L141

[3] STRAIN-MEASUREMENT OF EPITAXIAL CAF2 ON SI(111) BY MEV ION CHANNELING [J].

HASHIMOTO, S ;

PENG, JL ;

GIBSON, WM ;

SCHOWALTER, LJ ;

FATHAUER, RW .

APPLIED PHYSICS LETTERS, 1985, 47 (10) :1071-1073

[4]

HASHIMOTO S, 1988, IN PRESS MATER RES S

[5] PRESSURE DEPENDENCE OF ELASTIC CONSTANTS AND AN EXPERIMENTAL EQUATION OF STATE FOR CAF2 [J].

HO, PS ;

RUOFF, AL .

PHYSICAL REVIEW, 1967, 161 (03) :864-&

[6]

SCHOWALTER LJ, 1988, 2ND P INT S SI MBE, P301

[7]

SCHOWALTER LJ, 1988, MATER RES SOC S P, V102, P449

[8]

SCHOWALTER LV, 1986, MAT RES SOC S, V67, P125

[9]

1986, MATER RES SOC S P, V67

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